Invention Grant
- Patent Title: Light emitting device and fabrication method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US13967019Application Date: 2013-08-14
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Publication No.: US08735185B2Publication Date: 2014-05-27
- Inventor: Yeo Jin Yoon , Chang Yeon Kim
- Applicant: Seoul Opto Device Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2006-0136681 20061228; KR10-2006-0136682 20061228; KR10-2006-0136683 20061228
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention relates to a method of fabricating a patterned substrate for fabricating a light emitting diode (LED), the method including forming an aluminum layer on a substrate, forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of the aluminum layer, partially etching a surface of the substrate using the aluminum layer with the large number of the holes as a shadow mask, thereby forming patterns, and removing the aluminum layer from the substrate.
Public/Granted literature
- US20130330866A1 LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2013-12-12
Information query
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