Invention Grant
- Patent Title: Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
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Application No.: US14101414Application Date: 2013-12-10
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Publication No.: US08735186B2Publication Date: 2014-05-27
- Inventor: Tomoaki Moriwaka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2003-341383 20030930
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B82Y20/00

Abstract:
The energy distribution of the beam spot on the irradiated surface changes due to the change in the oscillation condition of the laser or before and after the maintenance. The present invention provides an optical system for forming a rectangular beam spot on an irradiated surface including a beam homogenizer for homogenizing the energy distribution of the rectangular beam spot on the irradiated surface in a direction of its long or short side. The beam homogenizer includes an optical element having a pair of reflection planes provided oppositely for reflecting the laser beam in the direction where the energy distribution is homogenized and having a curved shape in its entrance surface. The entrance surface of the optical element means a surface of the optical element where the laser beam is incident first.
Public/Granted literature
- US20140099781A1 BEAM HOMOGENIZER, LASER IRRADIATION APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-04-10
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