A method of fabricating a light emitting diode device comprises providing a substrate, growing an epitaxial structure on the substrate. The epitaxial structure includes a first layer on the substrate, an active layer on the first layer and a second layer on the active layer. The method further comprises depositing a conductive and reflective layer on the epitaxial structure, forming a group of first trenches and a second trench. Each of the first and second trenches extends from surface of the conductive and reflective layer to the first layer to expose part of the first layer. The method further comprises depositing conductive material to cover a portion of the conductive and reflective layer to form a first contact pad, and cover surfaces between adjacent first trenches to form a second contact pad. The second contact pad electrically connects the first layer by filling the conductive material in the first trenches.