Invention Grant
- Patent Title: Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device
- Patent Title (中): 氮化物半导体发光器件及其制造方法
-
Application No.: US12153756Application Date: 2008-05-23
-
Publication No.: US08735192B2Publication Date: 2014-05-27
- Inventor: Takeshi Kamikawa , Yoshinobu Kawaguchi
- Applicant: Takeshi Kamikawa , Yoshinobu Kawaguchi
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-363590 20051216; JP2006-320327 20061128
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.
Public/Granted literature
- US20080291961A1 Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device Public/Granted day:2008-11-27
Information query
IPC分类:
