A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming an active layer on the lower cladding layer such that the active layer has a quantum well of thirty percent indium, forming an upper cladding layer on the active layer, and forming a metal cap on the upper cladding layer.