In an embodiment a method of fabricating a MEMS structure is provided. The method includes fabricating a working structure in a doped layer proximate a first surface of a silicon substrate. The first surface of the silicon substrate is bonded to a first planar glass structure having a first one or more sacrificial features embedded therein. The method also includes etching to remove a bulk of the silicon substrate, wherein the bulk is reverse of the first surface on the silicon substrate, wherein etching removes the bulk and leaves the working structure bonded to the first planar glass structure. The method also includes etching to remove the first one or more sacrificial features from the first planar glass structure.