Invention Grant
US08735203B2 Solar cells 有权
太阳能电池

Solar cells
Abstract:
The present invention relates to multicrystalline p-type silicon wafers with high lifetime. The silicon wafers contain 0.2-2.8 ppma boron and 0.06-2.8 ppma phosphorous and/or arsenic and have been subjected to phosphorous diffusion and phosphorous gettering at a temperature of above 925° C. The invention further relates to a method for production of such multicrystalline silicon wafers and to solar cells comprising such silicon wafers.
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