Invention Grant
US08735207B2 Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array 有权
在背面照明(BSI)互补金属氧化物半导体(CMOS)传感器阵列中避免固定模式噪声的方法

Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array
Abstract:
The present disclosure provides one embodiment of a method. The method includes providing a semiconductor substrate having a front side and a backside, wherein the front side of the semiconductor substrate includes a plurality of backside illuminated imaging sensors; bonding a carrier substrate to the semiconductor substrate from the front side; thinning the semiconductor substrate from the backside; performing an ion implantation to the semiconductor substrate from the backside; performing a laser annealing process to the semiconductor substrate from the backside; and thereafter, performing a polishing process to the semiconductor substrate from the backside.
Information query
Patent Agency Ranking
0/0