Invention Grant
US08735207B2 Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array
有权
在背面照明(BSI)互补金属氧化物半导体(CMOS)传感器阵列中避免固定模式噪声的方法
- Patent Title: Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array
- Patent Title (中): 在背面照明(BSI)互补金属氧化物半导体(CMOS)传感器阵列中避免固定模式噪声的方法
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Application No.: US13079995Application Date: 2011-04-05
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Publication No.: US08735207B2Publication Date: 2014-05-27
- Inventor: Chung Chien Wang , Yeur-Luen Tu , Chia-Shiung Tsai
- Applicant: Chung Chien Wang , Yeur-Luen Tu , Chia-Shiung Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L21/306 ; H01L27/146

Abstract:
The present disclosure provides one embodiment of a method. The method includes providing a semiconductor substrate having a front side and a backside, wherein the front side of the semiconductor substrate includes a plurality of backside illuminated imaging sensors; bonding a carrier substrate to the semiconductor substrate from the front side; thinning the semiconductor substrate from the backside; performing an ion implantation to the semiconductor substrate from the backside; performing a laser annealing process to the semiconductor substrate from the backside; and thereafter, performing a polishing process to the semiconductor substrate from the backside.
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