Invention Grant
US08735209B2 Graphene device including a PVA layer or formed using a PVA layer
有权
包含PVA层或使用PVA层形成的石墨烯装置
- Patent Title: Graphene device including a PVA layer or formed using a PVA layer
- Patent Title (中): 包含PVA层或使用PVA层形成的石墨烯装置
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Application No.: US13838001Application Date: 2013-03-15
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Publication No.: US08735209B2Publication Date: 2014-05-27
- Inventor: Inanc Meric , Kenneth Shepard , Noah J. Tremblay , Philip Kim , Colin P. Nuckolls
- Applicant: The Trustees of Columbia University in the City of New York
- Applicant Address: US NY New York
- Assignee: The Trustees of Columbia University in the City of New York
- Current Assignee: The Trustees of Columbia University in the City of New York
- Current Assignee Address: US NY New York
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/84
- IPC: H01L21/84
Abstract:
An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a dielectric layer upon the PVA layer. In an example, the PVA layer can be activated and the dielectric layer can be deposited on an activated portion of the PVA layer. In an example, an electronic device can include such apparatus, such as included as a portion of graphene field-effect transistor (GFET), or one or more other devices.
Public/Granted literature
- US20140099764A1 GRAPHENE DEVICE INCLUDING A PVA LAYER OR FORMED USING A PVA LAYER Public/Granted day:2014-04-10
Information query
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