Invention Grant
- Patent Title: Method of manufacturing variable resistance memory device
- Patent Title (中): 制造可变电阻存储器件的方法
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Application No.: US13242237Application Date: 2011-09-23
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Publication No.: US08735215B2Publication Date: 2014-05-27
- Inventor: Jeong-Hee Park , Man-Sug Kang , Hideki Horii , Hyo-Jung Kim , Jung-Hwan Park
- Applicant: Jeong-Hee Park , Man-Sug Kang , Hideki Horii , Hyo-Jung Kim , Jung-Hwan Park
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0127580 20101214
- Main IPC: H01L21/06
- IPC: H01L21/06 ; H01L45/00

Abstract:
An example embodiment relates to a method including forming a bottom electrode and an insulating layer on a substrate, the insulating layer defining a first opening that exposes a portion of the bottom electrode. The method includes forming a variable resistance material pattern, including a plurality of elements, to fill the first opening. The variable resistance material pattern may be doped with a dopant that includes at least one of the plurality of elements in the variable resistance material pattern. The method includes forming a top electrode on the variable resistance material pattern.
Public/Granted literature
- US20120149165A1 METHOD OF MANUFACTURING VARIABLE RESISTANCE MEMORY DEVICE Public/Granted day:2012-06-14
Information query
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