Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13669525Application Date: 2012-11-06
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Publication No.: US08735222B2Publication Date: 2014-05-27
- Inventor: Masakatsu Goto , Minoru Enomoto
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2010-024097 20100205
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
In regard to a semiconductor device having a multilayered wiring board where a semiconductor chip is embedded inside, a technology which allows the multilayered wiring board to be made thinner is provided. A feature of the present invention is that, in a semiconductor device where bump electrodes are formed over a main surface (element forming surface) of a semiconductor chip embedded in a chip-embedded wiring board, an insulating film is formed over a back surface (a surface on the side opposite to the main surface) of the semiconductor chip. As a result, it becomes unnecessary to form a prepreg over the back surface of the semiconductor chip. Therefore, an effect of thinning the chip-embedded wiring board in which the semiconductor chip is embedded is obtained.
Public/Granted literature
- US20130059420A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-03-07
Information query
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