Invention Grant
US08735226B2 Methods and devices for forming nanostructure monolayers and devices including such monolayers
有权
用于形成纳米结构单层的方法和装置以及包括这种单层的装置
- Patent Title: Methods and devices for forming nanostructure monolayers and devices including such monolayers
- Patent Title (中): 用于形成纳米结构单层的方法和装置以及包括这种单层的装置
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Application No.: US13956483Application Date: 2013-08-01
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Publication No.: US08735226B2Publication Date: 2014-05-27
- Inventor: Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
- Applicant: SanDisk 3D LLC
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/3105 ; H01L21/28
Abstract:
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
Public/Granted literature
- US20130337642A1 METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES INCLUDING SUCH MONOLAYERS Public/Granted day:2013-12-19
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