Invention Grant
US08735228B2 Trench isolation MOS P-N junction diode device and method for manufacturing the same
有权
沟槽绝缘MOS P-N结二极管器件及其制造方法
- Patent Title: Trench isolation MOS P-N junction diode device and method for manufacturing the same
- Patent Title (中): 沟槽绝缘MOS P-N结二极管器件及其制造方法
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Application No.: US14018627Application Date: 2013-09-05
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Publication No.: US08735228B2Publication Date: 2014-05-27
- Inventor: Mei-Ling Chen , Hung-Hsin Kuo , Kuo-Liang Chao
- Applicant: PFC Device Corp.
- Applicant Address: TW New Taipei
- Assignee: PFC Device Corp.
- Current Assignee: PFC Device Corp.
- Current Assignee Address: TW New Taipei
- Agency: WPAT, PC
- Agent Justin King
- Priority: TW99129562A 20100901
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L21/8249 ; H01L29/66 ; H01L29/80 ; H01L29/94 ; H01L29/861
Abstract:
A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of an N-channel MOS structure and a lateral P-N junction diode, wherein a polysilicon-filled trench oxide layer is buried in the P-type structure to replace the majority of the P-type structure. As a consequence, the trench isolation MOS P-N junction diode device of the present invention has the benefits of the Schottky diode and the P-N junction diode. That is, the trench isolation MOS P-N junction diode device has rapid switching speed, low forward voltage drop, low reverse leakage current and short reverse recovery time.
Public/Granted literature
- US20140004681A1 TRENCH ISOLATION MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-01-02
Information query
IPC分类:
