Invention Grant
- Patent Title: Manufacturing method for thin film semiconductor device, manufacturing method for thin film semiconductor array substrate, method of forming crystalline silicon thin film, and apparatus for forming crystalline silicon thin film
- Patent Title (中): 薄膜半导体器件的制造方法，薄膜半导体阵列基板的制造方法，晶体硅薄膜的形成方法以及晶体硅薄膜的形成装置
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Application No.: US13451078Application Date: 2012-04-19
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Publication No.: US08735233B2Publication Date: 2014-05-27
- Inventor: Tomohiko Oda , Takahiro Kawashima
- Applicant: Tomohiko Oda , Takahiro Kawashima
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Greenblum & Bernstein, P.L.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/36
Abstract:
A crystalline silicon thin film is formed by irradiating a silicon thin film with a laser beam. The laser beam is a continuous wave laser beam. An intensity distribution of the laser beam in a first region about a center of the intensity distribution is symmetric on an anterior side and a posterior side of the center. The intensity distribution in a second region about the center is asymmetric on the anterior side and the posterior side. The first region is from the maximum intensity of the laser beam at the center to an intensity half of the maximum intensity. The second region is at most equal to the half of the maximum intensity of the laser beam. In the second region, an integral intensity value on the posterior side is larger than on the anterior side.
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