Invention Grant
US08735236B2 High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technology
有权
通过在替代栅极技术中去除侧壁上的功函而形成的高k金属栅电极结构
- Patent Title: High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technology
- Patent Title (中): 通过在替代栅极技术中去除侧壁上的功函而形成的高k金属栅电极结构
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Application No.: US13339842Application Date: 2011-12-29
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Publication No.: US08735236B2Publication Date: 2014-05-27
- Inventor: Klaus Hempel , Christopher Prindle , Rolf Stephan
- Applicant: Klaus Hempel , Christopher Prindle , Rolf Stephan
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, the fill conditions upon filling in the highly conductive electrode metal, such as aluminum, may be enhanced by removing the final work function metal, for instance a titanium nitride material in P-channel transistors, only preserving a well-defined bottom layer.
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