CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal

Invention Grant

US08735240B2 CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal 有权

Title translation: 扩散层去除后通过热处理在高k金属栅电极结构中的CET和栅极电流泄漏降低

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Patent Title: CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal
Patent Title (中): 扩散层去除后通过热处理在高k金属栅电极结构中的CET和栅极电流泄漏降低
Application No.: US13455489

Application Date: 2012-04-25
Publication No.: US08735240B2

Publication Date: 2014-05-27
Inventor: Torben Kelwing , Martin Trentzsch , Boris Bayha , Carsten Grass , Richard Carter
Applicant: Torben Kelwing , Martin Trentzsch , Boris Bayha , Carsten Grass , Richard Carter
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES Inc.
Current Assignee: GLOBALFOUNDRIES Inc.
Current Assignee Address: KY Grand Cayman
Agency: Amerson Law Firm, PLLC
Main IPC: H01L21/8238
IPC: H01L21/8238

CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal

Abstract:

When forming high-k metal gate electrode structures by providing the gate dielectric material in an early manufacturing stage, the heat treatment or anneal process may be applied after incorporating work function metal species and prior to capping the gate dielectric material with a metal-containing electrode material. In this manner, the CET for a given physical thickness for the gate dielectric layer may be significantly reduced.

Abstract(Chinese):

当通过在早期制造阶段提供栅极电介质材料来形成高k金属栅电极结构时，可以在加入功函金属物质之后并且在用含金属的电极封盖栅极电介质材料之前施加热处理或退火工艺材料。以这种方式，用于栅极电介质层的给定物理厚度的CET可以显着降低。

Public/Granted literature

US20130288435A1 CET AND GATE CURRENT LEAKAGE REDUCTION IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY HEAT TREATMENT AFTER DIFFUSION LAYER REMOVAL Public/Granted day:2013-10-31

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS