Invention Grant
- Patent Title: Semiconductor device devoid of an interfacial layer and methods of manufacture
- Patent Title (中): 没有界面层的半导体器件和制造方法
-
Application No.: US13098840Application Date: 2011-05-02
-
Publication No.: US08735244B2Publication Date: 2014-05-27
- Inventor: Michael P. Chudzik , Min Dai
- Applicant: Michael P. Chudzik , Min Dai
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Joseph Abate
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method of forming a dielectric stack devoid of an interfacial layer includes subjecting an exposed interfacial layer provided on a semiconductor material to a low pressure thermal anneal process for a predetermined time period at a temperature of about 900° C. to about 1000° C. with an inert gas purge. A semiconductor structure is also disclosed, with a dielectric stack devoid of an interfacial layer.
Public/Granted literature
- US20120280370A1 SEMICONDUCTOR DEVICE DEVOID OF AN INTERFACIAL LAYER AND METHODS OF MANUFACTURE Public/Granted day:2012-11-08
Information query
IPC分类:
