Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US13461532Application Date: 2012-05-01
-
Publication No.: US08735255B2Publication Date: 2014-05-27
- Inventor: Wen Chu Hsiao , Lai Wan Chong , Chun-Chieh Wang , Ying Min Chou , Hsiang Hsiang Ko , Ying-Lang Wang
- Applicant: Wen Chu Hsiao , Lai Wan Chong , Chun-Chieh Wang , Ying Min Chou , Hsiang Hsiang Ko , Ying-Lang Wang
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
In a method of manufacturing a semiconductor device, a source/drain feature is formed over a substrate. A Si-containing layer is formed over the source/drain feature. A metal layer is formed over the Si-containing layer. A metal silicide layer is formed from the metal layer and Si in the Si-containing layer.
Public/Granted literature
- US20130295739A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-11-07
Information query
IPC分类:
