Invention Grant
US08735259B2 Method of producing insulation trenches in a semiconductor on insulator substrate
有权
在绝缘体上半导体基板上制造绝缘沟槽的方法
- Patent Title: Method of producing insulation trenches in a semiconductor on insulator substrate
- Patent Title (中): 在绝缘体上半导体基板上制造绝缘沟槽的方法
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Application No.: US13555356Application Date: 2012-07-23
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Publication No.: US08735259B2Publication Date: 2014-05-27
- Inventor: Yannick Le Tiec , Laurent Grenouillet , Maud Vinet
- Applicant: Yannick Le Tiec , Laurent Grenouillet , Maud Vinet
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux energies alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux energies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1156854 20110727
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method for producing one or plural trenches in a device comprising a substrate of the semiconductor on insulator type formed by a semiconductive support layer, an insulating layer resting on the support layer and a semiconductive layer resting on said insulating layer, the method comprising steps of: a) localised doping of a given portion of said insulating layer through an opening in a masking layer resting on the fine semiconductive layer, b) selective removal of said given doped area at the bottom of said opening.
Public/Granted literature
- US20130189825A1 METHOD OF PRODUCING INSULATION TRENCHES IN A SEMICONDUCTOR ON INSULATOR SUBSTRATE Public/Granted day:2013-07-25
Information query
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