Invention Grant
- Patent Title: Method to prevent metal pad damage in wafer level package
- Patent Title (中): 防止晶圆级封装中金属焊盘损坏的方法
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Application No.: US12966756Application Date: 2010-12-13
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Publication No.: US08735260B2Publication Date: 2014-05-27
- Inventor: Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Hung-Hua Lin , Ming-Tung Wu , Ping-Yin Liu , Yao-Te Huang , Yuan-Chih Hsieh
- Applicant: Shang-Ying Tsai , Jung-Huei Peng , Hsin-Ting Huang , Hung-Hua Lin , Ming-Tung Wu , Ping-Yin Liu , Yao-Te Huang , Yuan-Chih Hsieh
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
The present disclosure provide a method of manufacturing a microelectronic device. The method includes forming a bonding pad on a first substrate; forming wiring pads on the first substrate; forming a protection material layer on the first substrate, on sidewalls and top surfaces of the wiring pads, and on sidewalls of the bonding pad, such that a top surface of the bonding pad is at least partially exposed; bonding the first substrate to a second substrate through the bonding pad; opening the second substrate to expose the wiring pads; and removing the protection material layer.
Public/Granted literature
- US20120149152A1 METHOD TO PREVENT METAL PAD DAMAGE IN WAFER LEVEL PACKAGE Public/Granted day:2012-06-14
Information query
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