Invention Grant
- Patent Title: Method and system for stripping the edge of a semiconductor wafer
- Patent Title (中): 剥离半导体晶片边缘的方法和系统
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Application No.: US13130160Application Date: 2009-11-16
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Publication No.: US08735261B2Publication Date: 2014-05-27
- Inventor: Robert W. Standley
- Applicant: Robert W. Standley
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- International Application: PCT/US2009/064545 WO 20091116
- International Announcement: WO2010/059556 WO 20100527
- Main IPC: H01L21/762
- IPC: H01L21/762 ; C23F1/08 ; H01L21/306

Abstract:
A method and a system are described herein for applying etchant to edges of a plurality of wafers. The system includes a sump configured for holding etchant, a roller having an outer surface in fluid communication with the sump and configured to have etchant thereon, a wafer cassette configured to retain wafers positioned therein so that edges of the wafers are in contact with the roller. The cassette permits axial rotation of the wafers about an axis. A method of applying etchant to the edge of the wafer includes placing the wafer edge in contact with the roller and rotating the roller about a longitudinal axis of the roller. At least a portion of the roller contact an etchant contained in a sump during rotation so that etchant is applied to the wafer edge.
Public/Granted literature
- US20110223741A1 METHOD AND SYSTEM FOR STRIPPING THE EDGE OF A SEMICONDUCTOR WAFER Public/Granted day:2011-09-15
Information query
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