Invention Grant
- Patent Title: Air-dielectric for subtractive etch line and via metallization
- Patent Title (中): 用于减法蚀刻线和通孔金属化的空气电介质
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Application No.: US13013108Application Date: 2011-01-25
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Publication No.: US08735279B2Publication Date: 2014-05-27
- Inventor: David V Horak , Elbert Huang , Charles W Koburger , Shom Ponoth , Chih-Chao Yang
- Applicant: David V Horak , Elbert Huang , Charles W Koburger , Shom Ponoth , Chih-Chao Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Catherine Ivers
- Main IPC: H01L21/4763
- IPC: H01L21/4763

Abstract:
A method and structure is disclosed whereby multiple interconnect layers having effective air gaps positioned in regions most susceptible to capacitive coupling can be formed. The method includes providing a layer of conductive features, the layer including at least two line members disposed on a substrate and spaced from one another by less than or equal to an effective distance, and at least one such line member also having a via member extending away from the substrate, depositing a poorly conformal dielectric coating to form an air gap between such line members, and exposing a top end of the via.
Public/Granted literature
- US20120187566A1 AIR-DIELECTRIC FOR SUBTRACTIVE ETCH LINE AND VIA METALLIZATION Public/Granted day:2012-07-26
Information query
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