Semiconductor device and manufacturing method therefor

Invention Grant

US08735282B2 Semiconductor device and manufacturing method therefor 有权

Title translation: 半导体装置及其制造方法

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Patent Title: Semiconductor device and manufacturing method therefor
Patent Title (中): 半导体装置及其制造方法
Application No.: US13250153

Application Date: 2011-09-30
Publication No.: US08735282B2

Publication Date: 2014-05-27
Inventor: Bing Wu
Applicant: Bing Wu
Applicant Address: CN Beijing
Assignee: Semiconductor Manufacturing International (Beijing) Corporation
Current Assignee: Semiconductor Manufacturing International (Beijing) Corporation
Current Assignee Address: CN Beijing
Agency: Koppel, Patrick, Heybl & Philpott
Agent Michael J. Ram
Priority: CN201110173872 20110627
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductor device and manufacturing method therefor

Abstract:

The present invention discloses a semiconductor device and a manufacturing method therefor. Conventionally, platinum is deposited in a device substrate to suppress diffusion of nickel in nickel silicide. However, introducing platinum by means of deposition makes the platinum only stay on the surface but fails to effectively suppress the diffusion of nickel over a desirable depth. According to the present invention, a semiconductor device is formed by implanting platinum into a substrate and forming NiSi in a region of the substrate where platinum is implanted. With the present invention, platinum can be distributed over a desirable depth range so as to more effectively suppress nickel diffusion.

Abstract(Chinese):

本发明公开了一种半导体器件及其制造方法。通常，将铂沉积在器件衬底中以抑制镍在硅化镍中的扩散。然而，通过沉积引入铂使得铂仅停留在表面上，但是不能有效地抑制镍在所需深度上的扩散。根据本发明，通过将铂注入衬底并在衬底中在其中注入铂的区域中形成NiSi来形成半导体器件。通过本发明，铂可以分布在期望的深度范围内，以便更有效地抑制镍扩散。

Public/Granted literature

US20120326317A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2012-12-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）