Invention Grant
US08735284B2 Conductive metal and diffusion barrier seed compositions, and methods of use in semiconductor and interlevel dielectric substrates
有权
导电金属和扩散阻挡种子组合物，以及在半导体和层间电介质基底中使用的方法
- Patent Title: Conductive metal and diffusion barrier seed compositions, and methods of use in semiconductor and interlevel dielectric substrates
- Patent Title (中): 导电金属和扩散阻挡种子组合物，以及在半导体和层间电介质基底中使用的方法
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Application No.: US14077805Application Date: 2013-11-12
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Publication No.: US08735284B2Publication Date: 2014-05-27
- Inventor: Kelly Malone , Habib Hichri
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Catherine Ivers, Esq.
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A metal seed composition useful in seeding a metal diffusion barrier or conductive metal layer on a semiconductor or dielectric substrate, the composition comprising: a nanoscopic metal component that includes a metal useful as a metal diffusion barrier or conductive metal; an adhesive component for attaching said nanoscopic metal component on said semiconductor or dielectric substrate; and a linker component that links said nanoscopic metal component with said adhesive component. Semiconductor and dielectric substrates coated with the seed compositions, as well as methods for depositing the seed compositions, are also described.
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