Invention Grant
- Patent Title: Semiconductor packaging process using through silicon vias
- Patent Title (中): 半导体封装工艺使用硅通孔
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Application No.: US13488930Application Date: 2012-06-05
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Publication No.: US08735287B2Publication Date: 2014-05-27
- Inventor: Belgacem Haba , Giles Humpston , Moti Margalit
- Applicant: Belgacem Haba , Giles Humpston , Moti Margalit
- Applicant Address: US CA San Jose
- Assignee: Invensas Corp.
- Current Assignee: Invensas Corp.
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L21/441
- IPC: H01L21/441

Abstract:
A microelectronic unit can include a semiconductor element having a front surface, a microelectronic semiconductor device adjacent to the front surface, contacts at the front surface and a rear surface remote from the front surface. The semiconductor element can have through holes extending from the rear surface through the semiconductor element and through the contacts. A dielectric layer can line the through holes. A conductive layer may overlie the dielectric layer within the through holes. The conductive layer can conductively interconnect the contacts with unit contacts.
Public/Granted literature
- US20120241976A1 SEMICONDUCTOR PACKAGING PROCESS USING THROUGH SILICON VIAS Public/Granted day:2012-09-27
Information query
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