Invention Grant
US08735293B2 Chemical mechanical polishing composition and methods relating thereto 有权
化学机械抛光组合物及其相关方法

Chemical mechanical polishing composition and methods relating thereto
Abstract:
A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising water; 1 to 40 wt % colloidal silica abrasive particles having an average particle size of ≦50 nm; and 0 to 5 wt % quarternary ammonium compound; wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free; and, wherein the chemical mechanical polishing composition has a pH >6 to 12.
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