Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer

Invention Grant

US08735296B2 Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer 有权

Title translation: 使用侧壁转移同时形成具有不同临界尺寸的多个结构的方法

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Patent Title: Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer
Patent Title (中): 使用侧壁转移同时形成具有不同临界尺寸的多个结构的方法
Application No.: US13552035

Application Date: 2012-07-18
Publication No.: US08735296B2

Publication Date: 2014-05-27
Inventor: Ryan O. Jung , Sivananda K. Kanakasabapathy
Applicant: Ryan O. Jung , Sivananda K. Kanakasabapathy
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Schmeiser, Olsen & Watts;
Main IPC: H01L21/311
IPC: H01L21/311

Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer

Abstract:

A method of forming multiple different width dimension features simultaneously. The method includes forming multiple sidewall spacers of different widths formed from different combinations of conformal layers on different mandrels, removing the mandrels, and simultaneously transferring the pattern of the different sidewall spacers into an underlying layer.

Abstract(Chinese):

同时形成多个不同宽度尺寸特征的方法。该方法包括形成由不同心轴上的适形层的不同组合形成的不同宽度的多个侧壁间隔物，去除心轴，以及同时将不同侧壁间隔物的图案转移到下面的层中。

Public/Granted literature

US20140024209A1 METHOD OF SIMULTANEOUSLY FORMING MULTIPLE STRUCTURES HAVING DIFFERENT CRITICAL DIMENSIONS USING SIDEWALL TRANSFER Public/Granted day:2014-01-23

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀