Invention Grant
US08735299B2 Semiconductor device manufacturing method and computer-readable storage medium
有权
半导体器件制造方法和计算机可读存储介质
- Patent Title: Semiconductor device manufacturing method and computer-readable storage medium
- Patent Title (中): 半导体器件制造方法和计算机可读存储介质
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Application No.: US13410512Application Date: 2012-03-02
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Publication No.: US08735299B2Publication Date: 2014-05-27
- Inventor: Seiichi Watanabe , Manabu Sato , Kazuki Narishige , Takanori Sato , Takayuki Katsunuma
- Applicant: Seiichi Watanabe , Manabu Sato , Kazuki Narishige , Takanori Sato , Takayuki Katsunuma
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2011-046772 20110303; JP2012-033954 20120220
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence.
Public/Granted literature
- US20120225561A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND COMPUTER-READABLE STORAGE MEDIUM Public/Granted day:2012-09-06
Information query
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