Invention Grant
- Patent Title: Film forming method, film forming apparatus, and storage medium
- Patent Title (中): 成膜方法，成膜装置和存储介质
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Application No.: US13429742Application Date: 2012-03-26
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Publication No.: US08735304B2Publication Date: 2014-05-27
- Inventor: Yuichiro Morozumi , Takuya Sugawara , Koji Akiyama , Shingo Hishiya , Toshiyuki Hirota , Takakazu Kiyomura
- Applicant: Yuichiro Morozumi , Takuya Sugawara , Koji Akiyama , Shingo Hishiya , Toshiyuki Hirota , Takakazu Kiyomura
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Elpida Memory Inc.,Tokyo Electron Limited
- Current Assignee: Elpida Memory Inc.,Tokyo Electron Limited
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2011-68855 20110325
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.
Public/Granted literature
- US20120244721A1 FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM Public/Granted day:2012-09-27
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