Invention Grant
- Patent Title: Light emitting transistor
- Patent Title (中): 发光晶体管
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Application No.: US13850613Application Date: 2013-03-26
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Publication No.: US08735880B2Publication Date: 2014-05-27
- Inventor: Junji Kido , Daigo Aoki
- Applicant: Dai Nippon Printing Co., Ltd.
- Applicant Address: JP Tokyo-to JP Yonezawa, Yamagata
- Assignee: Dai Nippon Printing Co., Ltd.,Junji Kido
- Current Assignee: Dai Nippon Printing Co., Ltd.,Junji Kido
- Current Assignee Address: JP Tokyo-to JP Yonezawa, Yamagata
- Agency: Ladas & Parry LLP
- Priority: JP2004-106154 20040331
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L51/00 ; H01L27/15 ; H01L31/12 ; H01L51/52 ; H01L33/40
Abstract:
A static induction light emitting transistor comprising: on a substrate: a source electrode; a hole transporting layer in which a slit-shaped gate electrode is embedded; an equipotential layer; light emitting layer; and a transparent or semitransparent drain electrode, provided in this order. In this light emitting transistor, the drain electrode provided on the opposite side of the gate electrode, viewing from the light emitting layer, is transparent or semitransparent.
Public/Granted literature
- US20130270532A1 LIGHT EMITTING TRANSISTOR Public/Granted day:2013-10-17
Information query
IPC分类:
