Light-emitting device

Invention Grant

US08735896B2 Light-emitting device 有权

Title translation: 发光装置

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Patent Title: Light-emitting device
Patent Title (中): 发光装置
Application No.: US13755238

Application Date: 2013-01-31
Publication No.: US08735896B2

Publication Date: 2014-05-27
Inventor: Shunpei Yamazaki
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Applicant Address: JP Atsugi-shi, Kanagawa-ken
Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
Agency: Robinson Intellectual Property Law Office, P.C.
Agent Eric J. Robinson
Priority: JP2003-273872 20030714
Main IPC: H01L21/786
IPC: H01L21/786

Abstract:

According to present invention, system on panel without complicating the process of TFT can be realized, and a light-emitting device that can be formed by lower cost than that of the conventional light-emitting device can be provided. A light-emitting device is provided in which a pixel portion is provided with a pixel including a light-emitting element and a TFT for controlling supply of current to the light-emitting element; a TFT included in a drive circuit and a TFT for controlling supply of current to the light-emitting element include a gate electrode, a gate insulating film formed over the gate electrode, a first semiconductor film, which overlaps with the gate electrode via the gate insulating film, a pair of second semiconductor films formed over the first semiconductor film; the pair of second semiconductor films are doped with an impurity to have one conductivity type; and the first semiconductor film is formed by semiamorphous semiconductor.

Abstract(Chinese):

根据本发明，可以实现面板上的系统，而不会使TFT的过程复杂化，并且可以提供可以以比传统的发光装置低的成本形成的发光装置。提供了一种发光器件，其中像素部分设置有包括发光元件的像素和用于控制向发光元件的电流供给的TFT; 包括在驱动电路中的TFT和用于控制向发光元件的电流供给的TFT包括栅电极，形成在栅电极上的栅极绝缘膜，通过栅极与栅电极重叠的第一半导体膜绝缘膜，形成在第一半导体膜上的一对第二半导体膜; 该一对第二半导体膜掺杂有杂质以具有一种导电类型; 并且第一半导体膜由半非晶半导体形成。

Public/Granted literature

US20130187166A1 LIGHT-EMITTING DEVICE Public/Granted day:2013-07-25

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/782	....制造多个器件，每一个由单个电路元件组成（H01L21/82优先）
H01L21/786	.....衬底是非半导体的，例如绝缘体