Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13368662Application Date: 2012-02-08
-
Publication No.: US08735904B2Publication Date: 2014-05-27
- Inventor: Yi Chang , Chia-Hua Chang , Yueh-Chin Lin , Yu-Kong Chen , Ting-En Shie
- Applicant: Yi Chang , Chia-Hua Chang , Yueh-Chin Lin , Yu-Kong Chen , Ting-En Shie
- Applicant Address: TW
- Assignee: National Chiao Tung University
- Current Assignee: National Chiao Tung University
- Current Assignee Address: TW
- Agency: Reed Smith LLP
- Priority: TW100120365A 20110610
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/336
Abstract:
A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.
Public/Granted literature
- US20120313107A1 Semiconductor Device Public/Granted day:2012-12-13
Information query
IPC分类:
