Invention Grant
- Patent Title: Ohmic electrode for use in a semiconductor diamond device
- Patent Title (中): 用于半导体金刚石器件的欧姆电极
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Application No.: US13386067Application Date: 2010-07-21
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Publication No.: US08735907B2Publication Date: 2014-05-27
- Inventor: Takatoshi Yamada , Somu Kumaragurubaran , Shinichi Shikata
- Applicant: Takatoshi Yamada , Somu Kumaragurubaran , Shinichi Shikata
- Applicant Address: JP Tokyo
- Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Tokyo
- Agency: Flynn, Thiel, Boutell & Tanis, P.C.
- Priority: JP2009-170667 20090722
- International Application: PCT/JP2010/062219 WO 20100721
- International Announcement: WO2011/010654 WO 20110127
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L23/48 ; H01L21/00 ; H01L21/44
Abstract:
In a semiconductor diamond device, there is provided an ohmic electrode that is chemically and thermally stable and has an excellent low contact resistance and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni and Cr such as Ni6Cr2 or Ni72Cr18Si10, which is chemically and thermally stable, is formed on a semiconductor diamond by a sputtering process and so forth, to thereby obtain the semiconductor diamond device provided with an excellent ohmic electrode. If heat treatment is applied after forming the nickel-chromium alloy or compound, it is improved in characteristics.
Public/Granted literature
- US20120132928A1 OHMIC ELECTRODE FOR USE IN A SEMICONDUCTOR DIAMOND DEVICE Public/Granted day:2012-05-31
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