Invention Grant
US08735924B2 Group III nitride semiconductor light-emitting device 有权
III族氮化物半导体发光器件

Group III nitride semiconductor light-emitting device
Abstract:
A Group III nitride semiconductor light-emitting device having an Ag or Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film is located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and a p-type layer, wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer.
Public/Granted literature
Information query
Patent Agency Ranking
0/0