Invention Grant
- Patent Title: Group III nitride semiconductor light-emitting device
- Patent Title (中): III族氮化物半导体发光器件
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Application No.: US13423015Application Date: 2012-03-16
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Publication No.: US08735924B2Publication Date: 2014-05-27
- Inventor: Shingo Totani , Kosuke Yahata , Yuya Ishiguro
- Applicant: Shingo Totani , Kosuke Yahata , Yuya Ishiguro
- Applicant Address: JP Kiyosu-Shi, Aichi-Ken
- Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee: Toyoda Gosei Co., Ltd.
- Current Assignee Address: JP Kiyosu-Shi, Aichi-Ken
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2011-061858 20110321; JP2011-231453 20111021
- Main IPC: H01L33/46
- IPC: H01L33/46

Abstract:
A Group III nitride semiconductor light-emitting device having an Ag or Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film is located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and a p-type layer, wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer.
Public/Granted literature
- US20120241791A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2012-09-27
Information query
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