A semiconductor device includes a cross-coupled transistor configuration formed by first and second PMOS transistors defined over first and second p-type diffusion regions, and by first and second NMOS transistors defined over first and second n-type diffusion regions, with each diffusion region electrically connected to a common node. Gate electrodes of the PMOS and NMOS transistors are formed by conductive features that are each defined within any one gate level channel. At least a portion of the first p-type diffusion region and at least a portion of the second p-type diffusion region are formed over a first common line of extent that extends perpendicular to the first parallel direction. Also, at least a portion of the first n-type diffusion region and at least a portion of the second n-type diffusion region are formed over a second common line of extent that extends perpendicular to the first parallel direction.