Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13225285Application Date: 2011-09-02
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Publication No.: US08735945B2Publication Date: 2014-05-27
- Inventor: Masashi Shima , Kaoru Saigoh , Nobuhiro Misawa , Takao Sasaki
- Applicant: Masashi Shima , Kaoru Saigoh , Nobuhiro Misawa , Takao Sasaki
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2010-267403 20101130
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/76

Abstract:
A semiconductor device includes a transistor array including a plurality of transistors each having a gate electrode extended in a first direction, the plurality of transistors being arranged in a second direction intersecting the first direction, and a pad electrode arranged in the first direction of the transistor array and electrically connected to source regions of the plurality of transistors.
Public/Granted literature
- US20120132964A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-05-31
Information query
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