Invention Grant
- Patent Title: Semiconductor device and method for producing the same
-
Application No.: US13687715Application Date: 2012-11-28
-
Publication No.: US08735954B2Publication Date: 2014-05-27
- Inventor: Naoya Sashida
- Applicant: Fujitsu Semiconductor Limited
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2011-287732 20111228
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A semiconductor device includes a semiconductor substrate; a first insulating film that is formed over the semiconductor substrate; a capacitor that is formed over the first insulating film and is formed by sequentially stacking a lower electrode, a capacitor dielectric film, and an upper electrode; a second insulating film that is formed over the capacitor and has a hole including the entire region of the upper electrode in plan view; and a conductor plug that is formed in the hole and contains tungsten.
Public/Granted literature
- US08772847B2 Semiconductor device and method for producing the same Public/Granted day:2014-07-08
Information query
IPC分类:
