Consistent with an example embodiment, there is a package that includes a first voltage terminal, and a second voltage terminal, a first die including a first MOSFET having a drain region electrically connected to the first voltage terminal and further having a source region, A second die is adjacent to the first die, the second die includes a second MOSFET having a drain region electrically connected to the source region of the first MOSFET and having a source region electrically connected to the second voltage terminal. The semiconductor package further includes a vertical capacitor having a first plate electrically connected to the drain region of the first MOSFET and a second plate electrically connected to the source region of the second MOSFET and the second plate is electrically insulated from the first plate by a dielectric material. The capacitor is integrated on the first die or the second die.