Invention Grant
US08735968B2 Integrated MOSFET devices with Schottky diodes and associated methods of manufacturing
有权
具有肖特基二极管和相关制造方法的集成MOSFET器件
- Patent Title: Integrated MOSFET devices with Schottky diodes and associated methods of manufacturing
- Patent Title (中): 具有肖特基二极管和相关制造方法的集成MOSFET器件
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Application No.: US12980143Application Date: 2010-12-28
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Publication No.: US08735968B2Publication Date: 2014-05-27
- Inventor: Tiesheng Li , Lei Zhang
- Applicant: Tiesheng Li , Lei Zhang
- Applicant Address: US CA San Jose
- Assignee: Monolithic Power Systems, Inc.
- Current Assignee: Monolithic Power Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Perkins Coie LLP
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L21/8234
Abstract:
The present technology discloses a semiconductor die integrating a MOSFET device and a Schottky diode. The semiconductor die comprises a MOSFET area comprising the active region of MOSFET, a Schottky diode area comprising the active region of Schottky diode, and a termination area comprising termination structures. Wherein the Schottky diode area is placed between the MOSFET area and the termination area such that the Schottky diode area surrounds the MOSFET area.
Public/Granted literature
- US20120161225A1 INTEGRATED MOSFET DEVICES WITH SCHOTTKY DIODES AND ASSOCIATED METHODS OF MANUFACTURING Public/Granted day:2012-06-28
Information query
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