Invention Grant
- Patent Title: Semiconductor device having vertical surrounding gate transistor structure, method for manufacturing the same, and data processing system
- Patent Title (中): 具有垂直周围栅极晶体管结构的半导体器件，其制造方法和数据处理系统
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Application No.: US12236012Application Date: 2008-09-23
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Publication No.: US08735970B2Publication Date: 2014-05-27
- Inventor: Yoshihiro Takaishi
- Applicant: Yoshihiro Takaishi
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-251348 20070927
- Main IPC: H01L29/423
- IPC: H01L29/423
Abstract:
A semiconductor device is provided which includes: semiconductor pillars which include impurity diffused layers, each semiconductor pillar having a width which allows full depletion of a semiconductor forming each semiconductor pillar, the impurity diffused layers being electrically connected to each other; and a common gate section which covers side faces of the pillars.
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