Invention Grant
- Patent Title: Trench-gate MOSFET device and method for making the same
- Patent Title (中): 沟槽栅MOSFET器件及其制造方法
-
Application No.: US13462397Application Date: 2012-05-02
-
Publication No.: US08735973B2Publication Date: 2014-05-27
- Inventor: Lei Zhang , Donald Ray Disney , Tiesheng Li , Rongyao Ma
- Applicant: Lei Zhang , Donald Ray Disney , Tiesheng Li , Rongyao Ma
- Applicant Address: CN Chengdu
- Assignee: Chengdu Monolithic Power Systems Co., Ltd.
- Current Assignee: Chengdu Monolithic Power Systems Co., Ltd.
- Current Assignee Address: CN Chengdu
- Agency: Perkins Coie LLP
- Priority: CN201110117821 20110503
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
The embodiments of the present disclosure disclose a trench-gate MOSFET device and the method for making the trench-gate MOSFET device. The trench-gate MOSFET device comprises a curving dopant profile formed between the body region and the epitaxial layer so that the portion of the body region under the source metal contact has a smaller vertical thickness than the other portion of the body region. The trench-gate MOSFET device in accordance with the embodiments of the present disclosure has improved UIS capability compared with the traditional trench-gate MOSFET device.
Public/Granted literature
- US20120280311A1 TRENCH-GATE MOSFET DEVICE AND METHOD FOR MAKING THE SAME Public/Granted day:2012-11-08
Information query
IPC分类:
