Invention Grant
- Patent Title: Semiconductor devices
- Patent Title (中): 半导体器件
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Application No.: US13579440Application Date: 2010-02-16
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Publication No.: US08735974B2Publication Date: 2014-05-27
- Inventor: Masaru Senoo
- Applicant: Masaru Senoo
- Applicant Address: JP Toyota-Shi
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Toyota-Shi
- Agency: Kenyon & Kenyon LLP
- International Application: PCT/JP2010/052284 WO 20100216
- International Announcement: WO2011/101955 WO 20110825
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94

Abstract:
An object of the present application is to reduce the gate capacitance without lowering the withstand voltage of a semiconductor device and prevent generation of a leak current between main electrodes even when an oxide film is formed poorly. A semiconductor device of the present application comprises a gate electrode and a dummy gate electrode. The gate electrode is insulated from an emitter electrode and faces a part of a body region via an insulating film, the part of the body region separating a drift region and an emitter region from each other. The dummy gate electrode is electrically connected with the emitter electrode and is connected with the drift region and the body region via the insulating film. At least a part of the dummy gate electrode comprises a first conductive region of the same type as the drift region. In the dummy gate electrode, the emitter electrode is separated from the drift region by the first conductive region.
Public/Granted literature
- US20120313164A1 SEMICONDUCTOR DEVICES Public/Granted day:2012-12-13
Information query
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