Doped graphene electronic materials

Invention Grant

US08735985B2 Doped graphene electronic materials 有权

Title translation: 掺杂石墨烯电子材料

Patent Title: Doped graphene electronic materials
Patent Title (中): 掺杂石墨烯电子材料
Application No.: US13714144

Application Date: 2012-12-13
Publication No.: US08735985B2

Publication Date: 2014-05-27
Inventor: Jeffrey A. Bowers , Roderick A. Hyde , Muriel Y. Ishikawa , Jordin T. Kare , Clarence T. Tegreene , Tatsushi Toyokuni , Richard N. Zare
Applicant: Seacrete LLC
Applicant Address: US WA Bellevue
Assignee: The Invention Science Fund I, LLC
Current Assignee: The Invention Science Fund I, LLC
Current Assignee Address: US WA Bellevue
Main IPC: H01L27/01
IPC: H01L27/01 ; H01L27/12 ; H01L31/0392

Abstract:

A graphene substrate is doped with one or more functional groups to form an electronic device.

Abstract(Chinese):

石墨烯衬底掺杂有一个或多个官能团以形成电子器件。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L27/00	由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件（其零部件入H01L23/00，H01L29/00至H01L51/00；由多个单个固态器件组成的组装件入H01L25/00）
H01L27/01	.只包括有在一公共绝缘衬底上形成的无源薄膜或厚膜元件的器件