中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US08735989B2 Semiconductor device that includes main element having insulated gate bipolar transistor and sense element having resistor and insulated gate bipolar transistor 有权
包括具有绝缘栅双极晶体管的主元件和具有电阻器和绝缘栅双极晶体管的感测元件的半导体器件

  • Patent Title: Semiconductor device that includes main element having insulated gate bipolar transistor and sense element having resistor and insulated gate bipolar transistor
  • Patent Title (中): 包括具有绝缘栅双极晶体管的主元件和具有电阻器和绝缘栅双极晶体管的感测元件的半导体器件
  • Application No.: US13290991
    Application Date: 2011-11-07
  • Publication No.: US08735989B2
    Publication Date: 2014-05-27
  • Inventor: Kenichi Matsushita
  • Applicant: Kenichi Matsushita
  • Applicant Address: JP Tokyo
  • Assignee: Kabushiki Kaisha Toshiba
  • Current Assignee: Kabushiki Kaisha Toshiba
  • Current Assignee Address: JP Tokyo
  • Agency: Patterson & Sheridan, LLP
  • Priority: JP2010-250178 20101108; JP2011-161130 20110722
  • Main IPC: H01L29/732
  • IPC: H01L29/732
Semiconductor device that includes main element having insulated gate bipolar transistor and sense element having resistor and insulated gate bipolar transistor
Abstract:
According to one embodiment, a semiconductor device includes a main element and a sense element. The main element is connected between a collector terminal and an emitter terminal. The main element has an insulated gate bipolar transistor structure. The sense element is connected in parallel with the main element via a sense resistor between the collector terminal and the emitter terminal. The sense element has an insulated gate bipolar transistor structure with a feedback capacitance larger than a feedback capacitance of the main element.
Abstract(Chinese):

根据一个实施例，半导体器件包括主元件和感测元件。 主元件连接在集电极端子和发射极端子之间。 主要元件具有绝缘栅双极晶体管结构。 感测元件通过集电极端子和发射极端子之间的检测电阻与主元件并联连接。 感测元件具有绝缘栅双极晶体管结构，其反馈电容大于主元件的反馈电容。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70 ...双极器件
H01L29/72 ....晶体管型器件，如连续响应于所施加的控制信号的
H01L29/73 .....双极结型晶体管
H01L29/732 ......纵向晶体管
Patent Agency Ranking
0/0