Invention Grant
- Patent Title: Transistor and method of producing same, and display
- Patent Title (中): 晶体管及其制作方法及显示方式
-
Application No.: US13585566Application Date: 2012-08-14
-
Publication No.: US08735998B2Publication Date: 2014-05-27
- Inventor: Yui Ishii , Toshio Fukuda
- Applicant: Yui Ishii , Toshio Fukuda
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2011-186115 20110829; JP2012-159578 20120718
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
A transistor includes: a control electrode; an active layer facing the control electrode; a first electrode and a second electrode electrically connected to the active layer; and an insulating layer provided between the control electrode and the active layer, the insulating layer containing diallyl isophthalate resin.
Public/Granted literature
- US20130048992A1 TRANSISTOR AND METHOD OF PRODUCING SAME, AND DISPLAY Public/Granted day:2013-02-28
Information query
IPC分类:
