Invention Grant
- Patent Title: Integrated hybrid hall effect transducer
- Patent Title (中): 综合混合霍尔效应传感器
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Application No.: US12642338Application Date: 2009-12-18
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Publication No.: US08736003B2Publication Date: 2014-05-27
- Inventor: David Erie , Noel Hoilien , Steven Kosier
- Applicant: David Erie , Noel Hoilien , Steven Kosier
- Applicant Address: US MA Worcester
- Assignee: Allegro Microsystems, LLC
- Current Assignee: Allegro Microsystems, LLC
- Current Assignee Address: US MA Worcester
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A Hall effect transducer in a semiconductor wafer comprises a first layer of semiconducting material, a second layer of semiconducting material, and a contact structure configured to provide a path for electrical current to pass through the second layer. The second layer has higher electron hole mobility than the first layer, and is epitaxially grown atop the first layer.
Public/Granted literature
- US20110147865A1 INTEGRATED HYBRID HALL EFFECT TRANSDUCER Public/Granted day:2011-06-23
Information query
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