Invention Grant
- Patent Title: Photodiode array and methods of fabrication
- Patent Title (中): 光电二极管阵列和制造方法
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Application No.: US13343165Application Date: 2012-01-04
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Publication No.: US08736008B2Publication Date: 2014-05-27
- Inventor: Abdelaziz Ikhlef , Wen Li
- Applicant: Abdelaziz Ikhlef , Wen Li
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Agency: The Small Patent Law Group
- Agent Dean D. Small
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L27/148 ; H01L29/66 ; H01L31/00

Abstract:
Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface and a plurality of conductive vias through the silicon wafer. The photodiode array further includes a patterned doped epitaxial layer on the first surface, wherein the patterned doped epitaxial layer and the substrate form a plurality of diode junctions. A patterned etching defines an array of the diode junctions.
Public/Granted literature
- US20130168750A1 PHOTODIODE ARRAY AND METHODS OF FABRICATION Public/Granted day:2013-07-04
Information query
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