Invention Grant
- Patent Title: Integrated circuit structure and method of forming the same
- Patent Title (中): 集成电路结构及其形成方法
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Application No.: US13246495Application Date: 2011-09-27
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Publication No.: US08736015B2Publication Date: 2014-05-27
- Inventor: Yao-Jen Tsai , Chih-Fu Chang , Chih-Kang Chuang , Yee-Ren Wuang , David Yen , Yuan-Jen Liao , Shih-Che Fang , Hung-Che Hsueh , Chih Mou Huang
- Applicant: Yao-Jen Tsai , Chih-Fu Chang , Chih-Kang Chuang , Yee-Ren Wuang , David Yen , Yuan-Jen Liao , Shih-Che Fang , Hung-Che Hsueh , Chih Mou Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
An embodiment is an integrated circuit (IC) structure. The structure comprises a deep n well in a substrate, a first pickup device in the deep n well, a first signal device in the deep n well, a dissipation device in the substrate, a second signal device in the substrate, a first electrical path between the first pickup device and the dissipation device, and a second electrical path between the first signal device and the second signal device. The dissipation device is outside of the deep n well, and the second signal device is outside of the deep n well. A highest point of the first electrical path is lower than a highest point of the second electrical path.
Public/Granted literature
- US20130075856A1 Integrated Circuit Structure and Method of Forming the Same Public/Granted day:2013-03-28
Information query
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