A semiconductor device comprises a top surface having a first contact, a bottom surface having a second contact, a via hole penetrating a substrate, an insulation layer structure on a sidewall of the via hole, the insulation layer structure having an air gap therein, a through electrode having an upper surface and a lower surface on the insulation layer structure, the through electrode filling the via hole and the lower surface being the second contact, and a metal wiring electrically connected to the upper surface of the through electrode and electrically connected to the first contact.