Invention Grant
US08736021B2 Semiconductor device comprising a metal system including a separate inductor metal layer
有权
半导体器件包括包括单独的电感器金属层的金属系统
- Patent Title: Semiconductor device comprising a metal system including a separate inductor metal layer
- Patent Title (中): 半导体器件包括包括单独的电感器金属层的金属系统
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Application No.: US13375062Application Date: 2009-05-15
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Publication No.: US08736021B2Publication Date: 2014-05-27
- Inventor: Tsui Ping Chu , Hyung Sun Yook , Poh Ching Sim
- Applicant: Tsui Ping Chu , Hyung Sun Yook , Poh Ching Sim
- Applicant Address: DE Erfurt
- Assignee: X-FAB Semiconductor Foundries AG
- Current Assignee: X-FAB Semiconductor Foundries AG
- Current Assignee Address: DE Erfurt
- Agency: Stevens & Showalter LLP
- International Application: PCT/IB2009/052041 WO 20090515
- International Announcement: WO2010/131079 WO 20101118
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L23/522 ; H01L23/64
Abstract:
In an integrated circuit an inductor metal layer is provided separately to the top metal layer, which includes the power and signal routing metal lines. Consequently, high performance inductors can be provided, for instance by using a moderately high metal thickness substantially without requiring significant modifications of the remaining metallization system.
Public/Granted literature
- US20120068303A1 Semiconductor Device Comprising a Metal System Including a Separate Inductor Metal Layer Public/Granted day:2012-03-22
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